SUM52N20-39P-E3 datasheet

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О ДАТАШИТЕ

• Маркировка
  SUM52N20-39P-E3
• Производитель
  Vishay Intertechnology
• Описание
  Vishay Intertechnology SUM52N20-39P-E3 Configuration: Single Continuous Drain Current: 52 A Current - Continuous Drain (id) @ 25?° C: 52A Drain To Source Voltage (vdss): 200V Drain-source Breakdown Voltage: 200 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 185nC @ 15V Gate-source Breakdown Voltage: +/- 25 V Input Capacitance (ciss) @ Vds: 4220pF @ 25V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 3.12W Power Dissipation: 3.12 W Rds On (max) @ Id, Vgs: 38 mOhm @ 20A, 15V Resistance Drain-source Rds (on): 0.038 Ohms Series: TrenchFET?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4.5V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 200 V Gate-Source Breakdown Voltage: +/- 25 V Resistance Drain-Source RDS (on): 0.038 Ohms Fall Time: 9 ns Rise Time: 170 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 34 ns Other Names: SUM52N20-39P-E3, SUM52N20-39P-E3TR
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

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